FDS6673BZ mosfet equivalent, p-channel mosfet.
* Max RDS(on) = 7.8 mW @ VGS = −10 V, ID = −14.5 A
* Max RDS(on) = 12 mW @ VGS = −4.5 V, ID = −12 A
* Extended VGS Range (−25 V) for Battery Applications
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common in Notebook Computers and Portable Battery Packs.
Features
* Max RDS(on) = 7.8 mW @ VGS = −10 V, ID = −14.5 A.
This P−Channel MOSFET is produced using onsemi’s advanced
Power Trench process that has been especially tailored to minimize the on−state resistance.
This device is well suited for Power Management and load switching applications common in Notebook C.
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